dm ph6050sk3q document number: ds37293 rev. 4 - 2 1 of 7 www.diodes.com july 2015 ? diodes incorporated dm ph6050sk3 q q advanced information yyww h6050s to252 60v +175c p - channel enhancement mode mosfet product summary b v dss r ds(on) max i d max t c = + 25c - 60v 50m ? @ v gs = - 10 v - 23.6 a 70m ? @ v gs = - 4.5 v - 20 a description and applications this mosfet is designed to meet the stringent requirements of a utomotive applications. it is qualified to aec - q101, s upported by a ppap and is ideal for use in: ? engine management systems ? body control electronics ? dc - dc converters features ? rated to + 175 c C i deal for h igh a mbient t emperature e nvironments ? 1 00% unclamped inductive switching C e nsures m ore r eliable and r obust e nd a pplication ? low qg C m inimizes s witching loss ? low r ds( on ) C minimizes on state loss ? lead - free finish; rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability ? ppap c apable (note 4 ) mechanical data ? case: to 252 (dpak) ? case material: molded plastic, green molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal finish - matte tin annealed over copper leadframe. solderable per mil - std - 202, method 208 ? w eight: 0. 315 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm p h 6050 s k3 q - 13 to252 2 , 5 00 /tape & reel note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900 ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . a utomotive products are aec - q101 qualified and are ppap capable. automotive, aec - q101 and standard products are electrically and thermally the same, except where specified. for more information, please refer t o http://www.diodes.com/quality/product_grade_definitions/ . 5 . for packaging details, go to our website at http://www.di odes.com/products/packages.html . marking information =manufacturer s marking h6050s = product type marking code yyww = date code marking yy = last digit of year (ex: 1 5 = 201 5 ) ww = week code (01 to 53) equivalent circuit pin out top view top view to252 d s g green
dm ph6050sk3q document number: ds37293 rev. 4 - 2 2 of 7 www.diodes.com july 2015 ? diodes incorporated dm ph6050sk3 q q advanced information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss - 60 v gate - source voltage v gss 20 v continuous drain current (note 7 ) v gs = - 10 v steady state t c = +25c t c = +70c i d - 23.6 - 19 a steady state t a = + 25c t a = +70c i d - 7.2 - 6.0 a pulsed drain curren t ( 10 dm - 40 a maximum continuous body diode f orward current (note 7 ) i s - 3 .8 a avalanche current (note 8 ) l = 0.1mh i as - 2 5 a avalanche energy (note 8 ) l = 0.1mh e as 3 1 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 6 ) p d 1. 9 w thermal resistance, junction to ambient (note 6 ) s teady s tate r ? ja 80 c/w total power dissipation (note 7 ) p d 3.8 w thermal resistance, junction to ambient (note 7 ) s teady s tate r ? ja 39 c/w thermal resistance, junction to case (note 7 ) r ? j c 3 operating and storage temperature range t j, t stg - 55 to +1 7 5 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 9 ) drain - source breakdown voltage bv dss - 6 0 v v gs = 0v, i d = - 250a zero gate voltage drain current t j = +25c i dss - 1 a v ds = - 60 v, v gs = 0v gate - source leakage i gss 100 n a v gs = 20 v, v ds = 0v on characteristics (note 9 ) gate threshold voltage v gs(th) - 1 - 3 v v ds = v gs , i d = - 250 a static drain - source on - resistance r ds (on) 50 m v gs = - 10 v, i d = - 7 a 70 v gs = - 4 .5 v, i d = - 7 a diode forward voltage v sd - 0.7 - 1.2 v v gs = 0v, i s = - 1 a dynamic characteristics (note 10 ) input capacitance c iss 1 , 377 pf v ds = - 3 0 v, v gs = 0v , f = 1mhz output capacitance c oss 8 7 pf reverse transfer capacitance c rss 6 8 pf gate resistance r g 12 v ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = - 4.5 v ) q g 12 nc v ds = - 30 v, i d = - 5 a total gate charge ( v gs = - 10 v ) q g 25 nc gate - source charge q gs 3. 8 nc gate - drain charge q gd 4.9 nc turn - on delay time t d(on) 5.3 ns v ds = - 30 v , v gs = - 10 v , r g = 3 , i d = - 5 a turn - on rise time t r 8.6 ns turn - off delay time t d(off) 49. 4 ns turn - off fall time t f 29.7 ns body diode reverse recovery time t rr ? 14.2 ? n s i f = - 5 a, di/dt = 10 0a/s body diode reverse recovery charge q rr ? 7. 9 ? n c notes: 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 7 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1 - inch square copper plate. 8 . i a s and e a s rating are based on low frequency and duty cycles to keep tj = + 25c . 9 . short duration pulse test used to minimize self - heating effect. 10 . guaranteed by design. not subject to product testing.
dm ph6050sk3q document number: ds37293 rev. 4 - 2 3 of 7 www.diodes.com july 2015 ? diodes incorporated dm ph6050sk3 q q advanced information 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 v , drain -source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d v = -3.0v gs v = -3.5v gs v = -4.0v gs v = -4.5v gs v = -10v gs v = -5.0v gs v = -2.5v gs 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds t = 175 c a ? 0.000 0.010 0.020 0.030 0.040 0.050 0.060 0.070 0.080 0.090 0.100 0 5 10 15 20 25 30 i , drain source current (a) figure 3 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -4.5v gs v = -10v gs 0 0.05 0.1 0.15 0.2 0.25 0.3 0 2 4 6 8 10 12 14 16 18 20 v , gate-source voltage (v) gs figure 4 typical transfer characteristic r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i = -7a d i = -5a d 0 0.02 0.04 0.06 0.08 0.1 0.12 0 5 10 15 20 25 30 i , drain source current (a) figure 5 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? v = -4.5v gs t = 175 c a ? 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = -4.5v i = -5a gs d v = -10v i = -10a gs d
dm ph6050sk3q document number: ds37293 rev. 4 - 2 4 of 7 www.diodes.com july 2015 ? diodes incorporated dm ph6050sk3 q q advanced information 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 -50 -25 0 25 50 75 100 125 150 175 t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature v = -10v i = a gs d -10 v = 5v i = a gs d -4. -5 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 175 t , ambient temperature (c) figure 8 gate threshold variation vs. ambient temperature a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) -i = 1ma d -i = 250a d 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 -v , source-drain voltage (v) figure 9 diode forward voltage vs. current sd - i , s o u r c e c u r r e n t ( a ) s t = 125 c a ? t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 150 c a ? t = 175 c a ? 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 45 50 55 60 v , drain-source voltage (v) figure 10 typical drain-source leakage current vs. voltage ds i , l e a k a g e c u r r e n t ( n a ) d s s t = 150c a t = 125c a t = 85c a t = 25c a t = 175c a 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) figure 11 typical junction capacitance ds c oss c rss f = 1mhz c iss 0 2 4 6 8 10 0 5 10 15 20 25 q , total gate charge (nc) figure 12 gate-charge characteristics g v , g a t e - s o u r c e v o l t a g e ( v ) g s v = -30v i = -5a ds d
dm ph6050sk3q document number: ds37293 rev. 4 - 2 5 of 7 www.diodes.com july 2015 ? diodes incorporated dm ph6050sk3 q q advanced information t1, pulse duration time (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 r (t) = r(t) * r thjc thjc r = 2.8c/w thjc duty cycle, d = t1/ t2 single pulse d = 0.005 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.3 d = 0.5 d = 0.7 d = 0.9 0.1 1 10 100 1 10 100 r ds(on) limited i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 14 soa, safe operation area t = 175c j (m ax ) t = 25c a v = 10v gs single pulse dut on 1 * mrp board p = 1s w p = 1ms w p = 100ms w p = 100 s w p = 10 s w p = 1 s w
dm ph6050sk3q document number: ds37293 rev. 4 - 2 6 of 7 www.diodes.com july 2015 ? diodes incorporated dm ph6050sk3 q q advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. to252 (dpak) dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0. 64 0. 88 0. 7 83 b2 0. 7 6 1.14 0. 95 b3 5.21 5.46 5.3 3 c 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 - - e - - 2.286 e 6.45 6.70 6.58 e1 4.32 - - h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 - all dimensions in mm dimensions value (in mm) c 4.572 x 1.0 60 x1 5.632 y 2.6 0 0 y1 5.700 y 2 10.700 b3 e l3 d l4 b2(2x) b(3x) e c a 71 h seating plane a1 gauge plane a 0.508 l 2.74ref d1 a2 e1 x1 x y2 y1 y c
dm ph6050sk3q document number: ds37293 rev. 4 - 2 7 of 7 www.diodes.com july 2015 ? diodes incorporated dm ph6050sk3 q q advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized a pplication. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. t his document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products ar e specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are s olely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related info rmation or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life su pport devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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